1N5809US
1N5809US
Part Number:
1N5809US
Manufacturer:
Microsemi
Description:
DIODE GEN PURP 100V 3A B-MELF
Lead Free Status / RoHS Status:
Contains lead / RoHS non-compliant
Available Quantity:
13061 Pieces
Data sheet:
1N5809US.pdf

Introduction

BYCHIPS is the stocking distributor for 1N5809US, we have the stocks for immediate shipping and also available for long time supply. Please send us your purchase plan for 1N5809US by email, we will give you a best price according your plan.
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Specifications

Voltage - Forward (Vf) (Max) @ If:875mV @ 4A
Voltage - DC Reverse (Vr) (Max):100V
Supplier Device Package:B, SQ-MELF
Speed:Fast Recovery = 200mA (Io)
Series:-
Reverse Recovery Time (trr):30ns
Packaging:Bulk
Package / Case:SQ-MELF, B
Operating Temperature - Junction:-65°C ~ 175°C
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:7 Weeks
Manufacturer Part Number:1N5809US
Expanded Description:Diode Standard 100V 3A Surface Mount B, SQ-MELF
Diode Type:Standard
Description:DIODE GEN PURP 100V 3A B-MELF
Current - Reverse Leakage @ Vr:5µA @ 100V
Current - Average Rectified (Io):3A
Capacitance @ Vr, F:60pF @ 10V, 1MHz
Email:sales@bychips.com

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