SI8409DB-T1-E1
SI8409DB-T1-E1
Part Number:
SI8409DB-T1-E1
Manufacturer:
Vishay / Siliconix
Description:
MOSFET P-CH 30V 4.6A 2X2 4-MFP
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
17285 Pieces
Data sheet:
SI8409DB-T1-E1.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:1.4V @ 250µA
Vgs (Max):±12V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:4-Microfoot
Series:TrenchFET®
Rds On (Max) @ Id, Vgs:46 mOhm @ 1A, 4.5V
Power Dissipation (Max):1.47W (Ta)
Packaging:Tape & Reel (TR)
Package / Case:4-XFBGA, CSPBGA
Other Names:SI8409DB-T1-E1TR
SI8409DBT1E1
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:15 Weeks
Manufacturer Part Number:SI8409DB-T1-E1
Input Capacitance (Ciss) (Max) @ Vds:-
Gate Charge (Qg) (Max) @ Vgs:26nC @ 4.5V
FET Type:P-Channel
FET Feature:-
Expanded Description:P-Channel 30V 4.6A (Ta) 1.47W (Ta) Surface Mount 4-Microfoot
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Drain to Source Voltage (Vdss):30V
Description:MOSFET P-CH 30V 4.6A 2X2 4-MFP
Current - Continuous Drain (Id) @ 25°C:4.6A (Ta)
Email:sales@bychips.com

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