TPN2010FNH,L1Q
TPN2010FNH,L1Q
Part Number:
TPN2010FNH,L1Q
Manufacturer:
Toshiba Semiconductor
Description:
MOSFET N-CH 250V 5.6A 8TSON
Lead Free Status / RoHS Status:
Lead free / RoHS Compliant
Available Quantity:
15630 Pieces
Data sheet:
TPN2010FNH,L1Q.pdf

Introduction

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Specifications

Vgs(th) (Max) @ Id:4V @ 200µA
Vgs (Max):±20V
Technology:MOSFET (Metal Oxide)
Supplier Device Package:8-TSON Advance (3.3x3.3)
Series:U-MOSVIII-H
Rds On (Max) @ Id, Vgs:198 mOhm @ 2.8A, 10V
Power Dissipation (Max):700mW (Ta), 39W (Tc)
Packaging:Tape & Reel (TR)
Package / Case:8-PowerVDFN
Other Names:TPN2010FNH,L1Q(M
TPN2010FNHL1QTR
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Moisture Sensitivity Level (MSL):1 (Unlimited)
Manufacturer Standard Lead Time:12 Weeks
Manufacturer Part Number:TPN2010FNH,L1Q
Input Capacitance (Ciss) (Max) @ Vds:600pF @ 100V
Gate Charge (Qg) (Max) @ Vgs:7nC @ 10V
FET Type:N-Channel
FET Feature:-
Expanded Description:N-Channel 250V 5.6A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On):10V
Drain to Source Voltage (Vdss):250V
Description:MOSFET N-CH 250V 5.6A 8TSON
Current - Continuous Drain (Id) @ 25°C:5.6A (Ta)
Email:sales@bychips.com

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